Electric field induced phase transitions and dynamic tuning...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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C257S004000, C257S043000, C257SE49002, C438S104000

Reexamination Certificate

active

08076662

ABSTRACT:
Phase transitions (such as metal-insulator transitions) are induced in oxide structures (such as vanadium oxide thin films) by applying an electric field. The electric field-induced phase transitions are achieved in VO2structures that scale down to nanometer range. In some embodiments, the optical and/or dielectric properties of the oxide structures are actively tuned by controllably varying the applied electric field. Applying a voltage to a single-phase oxide material spontaneously leads to the formation of insulating and conducting regions within the active oxide material. The dimensions and distributions of such regions can be dynamically tuned by varying the applied electric field and/or the temperature. In this way, oxide materials with dynamically tunable optical and/or dielectric properties are created.

REFERENCES:
patent: 2004/0069991 (2004-04-01), Dunn et al.
patent: 2005/0098836 (2005-05-01), Kim et al.
patent: 2008/0237578 (2008-10-01), Levy

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