Electrode for phase change memory device and method

Details Electrode for phase change memory device and method Electrode for phase change memory device and method

2006-03-07

2008-11-25

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE31029, C438S095000

Reexamination Certificate

active

07456420

ABSTRACT:
An electrode for a memory material of a phase change memory device is disclosed. The electrode includes a first layer adhered to the memory material, the first layer including a nitride (ANx), where A is one of titanium (Ti) and tungsten (W) and x greater than zero, but is less than 1.0, and a second layer adhered to the first layer, the second layer including a nitride (ANy), where y is greater than or equal to 1.0. The multiple layer electrode allows the first layer to better adhere to chalcogenide based memory material, such as GST, than for example, stoichiometric TiN or WN, which prevents delamination. A phase change memory device and method are also disclosed.

REFERENCES:
patent: 6744088 (2004-06-01), Dennison
patent: 6764984 (2004-07-01), Beatty
patent: 6791102 (2004-09-01), Johnson et al.
patent: 6797979 (2004-09-01), Chiang et al.
patent: 6830952 (2004-12-01), Lung
patent: 7259040 (2007-08-01), Pellizer et al.
patent: 2003/0155655 (2003-08-01), Fitzsimmons et al.
patent: 2005/0029502 (2005-02-01), Hudgens
patent: 2006/0234502 (2006-10-01), Bhat et al.
patent: 2006/0278900 (2006-12-01), Chang et al.
Y.N. Hwang, et al., “Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors,” Samsung Electronics Co., Ltd., pp. 91-92.
Dave Bursky, “Nonvolatile Memory: More Than A Flash In The Pan.” ED Online ID #5267, Jul. 2003, pp. 1-3.

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