Electrically programmable memory element with improved contacts

Details Electrically programmable memory element with improved contacts Electrically programmable memory element with improved contacts

2005-11-29

2005-11-29

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S758000, C438S095000

Reexamination Certificate

active

06969866

ABSTRACT:
A memory element comprising a volume of phase change memory material; and first and second contact for supplying an electrical signal to the memory material, wherein the first contact comprises a conductive sidewall spacer. Alternately, the first contact may comprise a contact layer having an edge adjacent to the memory material.

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patent: 6194746 (2001-02-01), Gonzalez et al.
patent: 6258707 (2001-07-01), Uzoh
patent: 6307264 (2001-10-01), Fukumoto
patent: 6423621 (2002-07-01), Doan et al.

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