LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Method of suppressing convection in a fluid in a cylindrical...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Method of synthesizing a compound of the formula M n+1 AX n...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Method of synthesizing a compound of the formula M n+1 AX n...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of synthesizing high quality, doped diamond and diamonds

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Method of vapor phase epitaxial growth

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of vapor-growing semiconductor crystal and apparatus for

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Method to make a SOI wafer for IC manufacturing

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method to manufacture Indium Nitride quantum dots

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method to reduce the dislocation density in group...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Methods and devices for high throughput crystallization

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Methods for and products of growth of single-crystal on arrayed

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Methods for epitaxial silicon growth

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Methods for forming high purity components and components...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Methods for forming phosphorus- and/or boron-containing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Methods for manufacturing monocrystalline diamond films

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Methods for manufacturing substrates to form monocrystalline dia

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Methods for transferring a layer onto a substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Methods for treating semiconductor substrates

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Methods of fabricating silicon carbide crystals