Methods for manufacturing monocrystalline diamond films

Details Methods for manufacturing monocrystalline diamond films Methods for manufacturing monocrystalline diamond films

1995-11-17

1998-09-29

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117108, 117929, 423446, C30B 2904

Patent

active

058141499

ABSTRACT:
A method is related to grow monocrystalline diamond films by chemical vapor deposition on large area at low cost. The substrate materials are either bulk single crystals of Pt or its alloys, or thin films of those materials deposited on suitable supporting materials. The surfaces of those substrates must be either (111) or (001), or must have domain structures consisting of (111) or (001) crystal surfaces. Those surfaces can be inclined within .+-.10 degree angles from (111) or (001). In order to increase the nucleation density of diamond, the substrate surface can be scratched by buff and/or ultrasonic polishing, or carbon implanted. Monocrystalline diamond films can be grown even though the substrate surfaces have been roughened. Plasma cleaning of substrate surfaces and annealing of Pt or its alloy films are effective in growing high quality monocrystalline diamond films.

REFERENCES:
patent: 5298286 (1994-03-01), Yang et al.
patent: 5404835 (1995-04-01), Yoder
Database WPI, Derwent Publications, AN-94-283741/35, JP-6-212428, Aug. 2, 1994.

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