Method of subliming material in CVD film preparation method

Details Method of subliming material in CVD film preparation method Method of subliming material in CVD film preparation method

1997-04-03

1999-05-18

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

117109, 117948, C30B25/12

Patent

active

059047712

ABSTRACT:
A method of subliming material is provided for use in a CVD film preparation method wherein a CVD precursor is sublimed from its solid state by heating to a temperature not exceeding its melting point, thereby producing a vapor of the precursor, and the vapor of the precursor is transported to a reactor. The method of subliming material comprises the steps of forming the solid-state compound into a film, covering a back surface of the film with a non-reactive support and exposing a front surface of the film to an atmosphere as a sublimation surface. The method maintains the exposed surface area of the solid compound constant during processing.

REFERENCES:
patent: 3472685 (1969-10-01), Marfaing
patent: 3514320 (1970-05-01), Vaughan
patent: 3591348 (1971-07-01), Belle
patent: 5645638 (1997-07-01), Kumagai
Chemical Separations and Measurements Dennis Peters/John Hayes/Gary Hieftje p. 480, 1974.

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