Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2008-07-22
2008-07-22
Kunemund, Robert M. (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S088000, C117S090000, C117S091000, C117S092000, C117S093000, C117S099000, C117S103000, C117S108000, C117S951000, C117S952000, C117S949000
Reexamination Certificate
active
10497234
ABSTRACT:
A method of synthesizing or growing a compound having the general formula Mn+1AXn(16) where M is a transition metal, n is 1, 2, 3 or higher, A is an A-group element and X is carbon, nitrogen or both, which comprises the step of exposing a substrate to gaseous components and/or components vaporized from at least one solid source (13, 14, 15) whereby said components react with each other to produce the Mn+1AXn(16) compound.
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Michel W. Barsoum; The MN+1AXNPhases: A New Class of Solids; Thermodynamically Stable Nanolaminates; Program Solid St. Chem; 2000; pp. 201-281; vol. 28.
T. Goto et al; “Chemically Vapor Deposited Ti3SiO2”; Materials Research Bulletin, 1987; pp. 1195-1201; vol. 22; The Research Institue for Iron, Steel and Other Metals, Tohku Univeristy, 980 Sendai, Japan.
Michel W. Barsoum; The Mn+1AXNPhases: A New Class of Solids; Thermodynamically Stable Nanolaminates; Program Solid St. Chem; 2000; pp. 201-281; vol. 28; Department of Materials Engineering, Drexel University, Philadelphia, PA 19104.
Birch Jens
Hultman Lars
Isberg Peter
Jansson Ulf
Palmquist Jens-Petter
ABB AB
Franklin Eric J.
Kunemund Robert M.
Song Matthew J
Venable LLP
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