Method of vapor phase epitaxial growth

Details Method of vapor phase epitaxial growth Method of vapor phase epitaxial growth

1996-01-03

1997-06-10

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 94, 117 95, 117 97, 438928, 438503, C30B 2302

Patent

active

056371454

ABSTRACT:
In a vapor phase epitaxial growth process, formation of a silicon nodule on a back side protective film on a wafer is prevented. In the process, a susceptor situated within a reaction chamber is provided with a depression portion for supporting a wafer at a back side peripheral portion thereof. A protection film on a back side peripheral portion of the wafer, which is to be in contact with the susceptor 4 is removed in advance, prior to epitaxial growth. In addition, it is also effective to apply a silicon coating on the surface of the depression portion, prior to the epitaxial growth process.

REFERENCES:
patent: 3634150 (1972-01-01), Horn

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