Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2007-05-22
2007-05-22
Schillinger, Laura M. (Department: 2813)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S089000, C438S791000
Reexamination Certificate
active
10099216
ABSTRACT:
The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H, F and Cl to remove native oxide. After removing the native oxide, the substrates are simultaneously exposed to a first reactive material to form a first mass across at least some exposed surfaces of the substrates. The first reactive material is removed from the reaction chamber, and subsequently the substrates are exposed to a second reactive material to convert the first mass to a second mass. The invention also includes apparatuses which can be utilized for simultaneous ALD treatment of a plurality of discrete semiconductor substrates.
REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4341818 (1982-07-01), Adams et al.
patent: 4389973 (1983-06-01), Suntola et al.
patent: 4632058 (1986-12-01), Dixon et al.
patent: 5251667 (1993-10-01), Kunz et al.
patent: 5281274 (1994-01-01), Yoder
patent: 5411590 (1995-05-01), Hawkins et al.
patent: 5567267 (1996-10-01), Kazama et al.
patent: 5618349 (1997-04-01), Yuuki
patent: 5879459 (1999-03-01), Gadgil et al.
patent: 6024799 (2000-02-01), Chen et al.
patent: 6124158 (2000-09-01), Dautartas et al.
patent: 6144802 (2000-11-01), Kim
patent: 6147013 (2000-11-01), Sun et al.
patent: 6174809 (2001-01-01), Kang et al.
patent: 6306216 (2001-10-01), Kim et al.
patent: 6321680 (2001-11-01), Cook et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6468924 (2002-10-01), Lee et al.
patent: 6491518 (2002-12-01), Fujikawa et al.
patent: 6514870 (2003-02-01), Rossman
patent: 6579372 (2003-06-01), Park
patent: 6585823 (2003-07-01), Van Wijck
patent: 6592942 (2003-07-01), Van Wijck
patent: 6673701 (2004-01-01), Marsh et al.
patent: 6753271 (2004-06-01), Sarigiannis et al.
patent: 6764916 (2004-07-01), Furukawa et al.
patent: 6802712 (2004-10-01), Bernhardt et al.
patent: 6831004 (2004-12-01), Byun et al.
patent: 6835674 (2004-12-01), Doan et al.
patent: 6838125 (2005-01-01), Chung et al.
patent: 6890596 (2005-05-01), Sarigiannis et al.
patent: 6897119 (2005-05-01), Sneh et al.
patent: 6907897 (2005-06-01), Maula et al.
patent: 6916398 (2005-07-01), Chen et al.
patent: 6939579 (2005-09-01), Bondestam et al.
patent: 6941963 (2005-09-01), Maula et al.
patent: 2002/0043216 (2002-04-01), Hwang et al.
patent: 2002/0086476 (2002-07-01), Kim et al.
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2003/0013320 (2003-01-01), Kim et al.
patent: 2003/0036268 (2003-02-01), Brabant et al.
patent: 2003/0040196 (2003-02-01), Lim et al.
patent: 2003/0209193 (2003-11-01), Van Wijck
patent: 2004/0026037 (2004-02-01), Shinriki et al.
patent: 1069599 (2001-01-01), None
patent: 2001172767 (2001-06-01), None
patent: 2002060947 (2002-02-01), None
Machine language translation of JP 2001172767 A.
Kukli, et al. “Atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O” Journal of the Electrochemical Society 142(5) May 1995, pp. 1670-1674.
Kukli, et al. “Properties of Ta2O5-based nanolaminates deposited by atomic layer epitaxy” Journal of the Electrochemical Society 144(1) Jan. 1997, pp. 300-306.
Niinistö, L., “Advanced Thin Films for Electronics and Opto-Electronics by Atomic Layer Epitaxy”, Jun. 2000 IEEE, pp. 33-42.
Suntola, T., “Surface Chemistry of Materials Deposition at Atomic Layer Level”, Applied Surface Science 100/101, © 1996 Elsevier Science, pp. 391-398.
Siimon, H. et al., “Modelling of Precursor Flow and Deposition in Atomic Layer Deposition Reactor”, Journal de Physique IV, vol. 5, Colloque C5, Supplement II, n.6, Jun. 1995, (Proceedings of the Tenth European Conf. on Chemical Vapor Deposition, Venice, Italy, Sep. 1995), pp. 245-252.
Wolf, Stanley Ph.D. & Richard N. Tauber Ph.D., Silicon Processing for the VLSI Era, vol. 1: Processing Technology, Lattice Press, Sunset Beach, 1986.
Breiner Lyle D.
Doan Trung Tri
Ping Er-Xuan
Zheng Lingyi A.
Micro)n Technology, Inc.
Schillinger Laura M.
Wells St. John P.S.
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