Methods for forming phosphorus- and/or boron-containing...

Details Methods for forming phosphorus- and/or boron-containing... Methods for forming phosphorus- and/or boron-containing...

2007-09-25

2007-09-25

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S090000, C117S094000, C117S004000, C117S005000, C117S006000

Reexamination Certificate

active

10436640

ABSTRACT:
A method of forming a phosphorus- and/or boron-containing silica layer, such as a PSG, BSG, or BPSG layer, on a substrate, such as a semiconductor substrate or substrate assembly.

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