Methods for epitaxial silicon growth

Details Methods for epitaxial silicon growth Methods for epitaxial silicon growth

2006-09-05

2006-09-05

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S094000, C117S095000, C117S096000, C117S929000

Reexamination Certificate

active

07101435

ABSTRACT:
Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.

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