Method to manufacture Indium Nitride quantum dots

Details Method to manufacture Indium Nitride quantum dots Method to manufacture Indium Nitride quantum dots

2005-11-22

2005-11-22

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C438S962000

Reexamination Certificate

active

06966948

ABSTRACT:
The invention concerns a method for manufacturing sizeable quantum dots of Indium Nitride in which a layer of Indium Nitride is grown onto a layer of crystalline buffer. The crystalline buffer is chosen with a lattice structure similar to the lattice structure of Indium Nitride and with the lattice mismatch between Indium Nitride and the crystalline buffer being greater than 5%. During the growth of Indium Nitride, surface strains are produced by the crystalline buffer, allowing the Indium Nitride to self-organize onto the crystalline buffer so as to form a plurality of sizeable quantum dots.

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