Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1991-08-20
1995-01-17
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 84, 117 89, C30B 2904
Patent
active
053817559
ABSTRACT:
Diamond crystals and films having a well-controlled amount of dopant therein are synthesized by incorporating a dopant into a deposition species formed from a gaseous source of carbon and a gaseous source of hydrogen. Flame and/or plasma deposition may be used. Various apparatuses for carrying out the growth of the doped diamond are also disclosed.
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"The C-V Characteristics of Schottky Barriers On Laboratory Grown Semi-Cocting Diamonds"; Glover; Solid-State Electronics; (1973); vol. 16; pp. 973-983.
Nishimura et al., "Material and Electrical Characterization of Polycrystalline Boron-Doped Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition", J. Appl. Phys. 69(5), 1 Mar. 1991, pp. 3142-3148.
Fujimori et al., "Characterization of Conducting Diamond Films", Vacuum, vol. 36, Nos. 1-3, 1986, pp. 99 to 102.
Poferl et al., "Growth of Boron Doped Diamond Seed Crystals by Vapor Deposition", J. Appl. Phys., vol. 44, No. 4, Apr. 1973, pp. 1428-1434.
Okano et al., "Synthesis of Diamond Thin Films Having Semiconductive-Properties", Japanese Journal of Applied Physics, vol. 27, No. 2, Feb. 1988, pp. L173-L175.
Glesener John W.
Merrish Arthur A.
Snail Keith A.
Breneman R. Bruce
Edelberg Barry A.
Garrett Felisa
McDonnell Thomas E.
The United States of America as represented by the Secretary of
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