Methods for forming high purity components and components...

Details Methods for forming high purity components and components... Methods for forming high purity components and components...

2005-04-19

2005-04-19

Hiteshew, Felisa (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S105000

Reexamination Certificate

active

06881262

ABSTRACT:
A method of forming a component is disclosed. The method includes: providing a core containing a porous material; infiltrating the core with silicon carbide; and removing the porous material of the core, thereby forming a porous substrate containing silicon carbide.

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