Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1991-10-22
1994-08-02
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117952, C30B 2514
Patent
active
053342771
ABSTRACT:
A method of growing in vapor phase a semiconductor crystal layer supplies a reaction gas to a portion above the surface of a heated substrate so as to be parallel or obliquely to the substrate, and uses a transparent blow tube widened toward its blow port like a funnel to blow a pressing gas, which is inert with respect to the reaction gas, toward the substrate, thereby bringing the reaction gas into contact with the surface of the substrate.
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Kunemund Robert
Nichia Kagaky Kogyo K.K.
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