Method to make a SOI wafer for IC manufacturing

Details Method to make a SOI wafer for IC manufacturing Method to make a SOI wafer for IC manufacturing

1994-09-15

1997-01-28

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

156153, 437228, C30B 2502

Patent

active

055974104

ABSTRACT:
A method to eliminate the sharp edge problem in the bonded wafer technique of the SOI technology is achieved by employing a different dimension of the front surface between the bonding wafer and the holding substrate. A thin film layer with a predetermined thickness is formed to planarize the edge of the finished semiconductor film when the fabrication of the SOI wafer is completed.

REFERENCES:
patent: 5152857 (1992-10-01), Ito et al.
patent: 5401670 (1995-03-01), Yen

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