Reducing gate dielectric material to form a metal gate...
Reducing implant degradation in tilted implantations by...
Reducing leakage currents in memories with phase-change...
Reducing line to line capacitance using oriented dielectric...
Reducing metal voids during BEOL metallization
Reducing nitride residue by changing the nitride film surface pr
Reducing non-uniformity in a refill layer thickness for a semico
Reducing oxidation of phase change memory electrodes
Reducing oxidation under a high K gate dielectric
Reducing particulate contamination during semiconductor device p
Reducing photoresist layer degradation in plasma immersion...
Reducing photoresist shrinkage via plasma treatment
Reducing pitch with continuously adjustable line and space dimen
Reducing poly-depletion through co-implanting carbon and...
Reducing reactions between polysilicon gate electrodes and...
Reducing reflectivity on a semiconductor wafer by annealing alum
Reducing reflectivity on a semiconductor wafer by annealing...
Reducing secondary injection effects
Reducing shunts in memories with phase-change material
Reducing stress in a flip chip assembly