Reducing nitride residue by changing the nitride film surface pr

Details Reducing nitride residue by changing the nitride film surface pr Reducing nitride residue by changing the nitride film surface pr

1998-05-15

1999-01-12

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438750, 438751, 438800, 134 2, H01L 2130, H01L 2100

Patent

active

058588612

ABSTRACT:
A new method of changing the surface property of a nitride film from hydrophobic to hydrophillic and thereby reducing nitride residue after photolithography is described. A pad oxide layer is provided on the surface of a semiconductor substrate. A nitride layer is deposited overlying the pad oxide layer. Thereafter, the surface of the nitride layer is cleaned wherein the surface is changed from hydrophobic to hydrophillic. The nitride layer is coated with a photoresist film which is developed to leave an opening where the field oxidation region is to be formed. The nitride layer and pad oxide layer are etched away where they are not covered by the photoresist film to expose a portion of the semiconductor substrate. The exposed portion of the semiconductor substrate is oxidized to form a field oxidation region in the fabrication of an integrated circuit.

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patent: 5454901 (1995-10-01), Tsuji
patent: 5607543 (1997-03-01), Eisenberg et al.
patent: 5712198 (1995-12-01), Shive et al.

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