Reducing pitch with continuously adjustable line and space dimen

Details Reducing pitch with continuously adjustable line and space dimen Reducing pitch with continuously adjustable line and space dimen

1996-07-26

1998-08-18

Chea, Thorl

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438712, 438724, 438757, H01L 213065, C03C 2506

Patent

active

057958300

ABSTRACT:
A method of forming sub-lithographic elements and spaces therebetween where the pitch may be reduced with continuously adjustable line and space dimensions, and a structure resulting from the method, are disclosed. A plurality of spaced convertible members are formed on a substrate. A portion of each member is then converted, thereby reducing the dimensions of the unconverted portion of the member while increasing the width of the member plus its converted layer. A conformal layer of material is then deposited over the converted members, followed by directional etching of the conformal layer. The unconverted portion of the member is then removed. The line and space dimensions can be continuously adjusted by altering either or both of the member's converted layer and conformal layer.

REFERENCES:
patent: 3997367 (1976-12-01), Yau
patent: 4083098 (1978-04-01), Nicholas
patent: 4287661 (1981-09-01), Stoffel
patent: 4432132 (1984-02-01), Kinsbron et al.
patent: 4559693 (1985-12-01), Kamei
patent: 4648937 (1987-03-01), Ogura et al.
patent: 4650544 (1987-03-01), Erb et al.
patent: 4685198 (1987-08-01), Kawakita et al.
patent: 4707218 (1987-11-01), Giammarco et al.
patent: 4776922 (1988-10-01), Bhattacharyya et al.
patent: 4820654 (1989-04-01), Lee
patent: 4903108 (1990-02-01), Young et al.
patent: 4994400 (1991-02-01), Yamaguchi et al.
patent: 5139904 (1992-08-01), Auda et al.
patent: 5292689 (1994-03-01), Cronin et al.
Coe, "The Lateral Diffusion of Boron in Polycrystalline Silicon and its Influence on the Fabrication of Sub-Micron Mosts", Solid State Electronics V20, 1977, pp. 985-992.
Abbas, et al. "Extending the Minimal Dimesions of Photolithographic Integrated Circuit Fabrication Processing", IBM Technical Disclosure Bulletin V20 N4, Sep. 1977, pp. 1376-1378.
Miller, "High Density Planar Metal Lands", IBM Technical Disclosure Bulletin V23 N6, Nov. 1980, pp. 2270-2276.
Goth, et al., "Tighter Spacing of Metal Lines for Improved Density", IBM Technical Disclosure Bulletin V24 N2, Jul. 1981, pp. 1286-1287.
Tsang, "Method to Improve the Controllability of Lightly Doped Drain SiO.sub.2 Spacer Formation", IBM Technical Disclosure Bulletin V24 N2, Jul. 1981 pp. 1293-1295.
Magso, et al., "Self-Aligned Metal Bipolar Process", IBM Technical Disclosure Bulletin V24 N10, Mar. 1982, pp. 5128-5131.
Abbas, et al. "High Performance Lateral Bipolar Devices", IBM Technical Disclosure Bulletin V25 N8, Jan. 1983, pp. 4421-4422.
Jambotkar, "Submicrometer-Wide Polysilicon Resistors", IBM Technical Bulletin V25 N9, Feb. 1983, pp. 4785-4788.
De La Moneda, "Processes to Reduce and Control the P-Type Doping Concentration at the Boundary Between Recessed Oxide and Active Device Regions", IBM Technical Disclosure Bulletin V25 N11B, Apr. 1983, pp. 6131-6142.
Abbas, et al., "Formation of Sub-Micron Patterns with Negligible Tolerance", IBM Technical Disclosure Bulletin V26 N6, Nov. 1983, pp. 2732-2738.
Holland, et al., "Advanced Groundrule Processing Performed with Currently Available Photolithographic Tools", IBM Technical Disclosure Bulletin V29 N9, Feb. 1987, pp. 3928-3929.
Brady et al., "Nanostructures with Optical Lithography and Double Silylation" IBM Technical Disclosure Bulletin V32 N3B, Aug. 1989, pp. 381-382.
Bartush, "Submicron Insulation Thickness to Improve Contact Stud Density", IBM Technical Disclosure Bulletin V33 N4, Sep. 1990, pp. 233-234.

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