Reducing reflectivity on a semiconductor wafer by annealing alum

Details Reducing reflectivity on a semiconductor wafer by annealing alum Reducing reflectivity on a semiconductor wafer by annealing alum

1998-08-24

2000-05-30

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438658, 438660, 438688, 20419227, H01L 2144

Patent

active

060690755

ABSTRACT:
The present invention provides methods of producing an anti-reflective layer on a semiconductor wafer/device and wafers/devices including that anti-reflective layer. The anti-reflective layer is produced by annealing layers of titanium and aluminum on a wafer/device to provide a roughened surface that significantly reduces reflectivity to improve the accuracy and definition provided by optical lithography processes.

REFERENCES:
patent: 4783248 (1988-11-01), Kohlhase et al.
patent: 5066611 (1991-11-01), Yu
patent: 5281850 (1994-01-01), Kanamori
patent: 5427666 (1995-06-01), Muller et al.
patent: 5441616 (1995-08-01), Nanda et al.
patent: 5635763 (1997-06-01), Inoue et al.
patent: 5700718 (1997-12-01), McTeer
Donald S. Gardner, et al. "Layered and Homogeneous Films of Aluminum and Aluminum/Silicon with Titanium . . . "IEDM 84 p. 114, 1984.
W.Y.-C. Lai et al., "The Use of Ti as an Antireflective Coating for the Laser Planarization of Al for VLSI Metallization", 6.sup.th Int'l IEEE VLSI Multilevel Interconnect Conference, Cat. No. 89-TH0259-2, Jun. 12-13, 1989, p. 501.
R. Lui et al., "Study of Pulsed Laser Planarization of Aluminum for VLSI Metallization", 6.sup.th Int'l IEEE VLSI Multilevel Interconnect Conference, Cat. No. 89TH0259-2, Jun. 12-13, pp. 329-335.
C. Pickering et al., Characterisation of Rough Silicon Surfaces using Spectroscopic Ellipsometry, Reflectance, Scanning Electron Microscopy and Scattering Measurements, Materials Science and Engineering, B%, 295-299, (1990).

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