Reducing particulate contamination during semiconductor device p

Details Reducing particulate contamination during semiconductor device p Reducing particulate contamination during semiconductor device p

1995-11-20

1997-04-22

Chaudhari, Chandra

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438935, 438974, 134 12, 134 1, B44C 122

Patent

active

056225954

ABSTRACT:
Contaminant particles in a vacuum plasma processing chamber can be removed from the surface of a substrate in the chamber by first reducing the pressure in the chamber so as to elevate the particles above any obstruction about the substrate, including a clamping ring and the like, maintaining a plasma from a gas fed to the chamber so that the particles are in the plasma, and then increasing the gas flow to the chamber so as to sweep the particles out of the chamber through the exhaust system of the processing chamber while maintaining a plasma in the chamber.

REFERENCES:
patent: 4871416 (1989-10-01), Fukuda
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4985372 (1991-01-01), Narita
patent: 5043300 (1991-08-01), Nulman
patent: 5083865 (1992-01-01), Kinney et al.
patent: 5089441 (1992-02-01), Moslehi
patent: 5102496 (1992-04-01), Savas
patent: 5143866 (1992-09-01), Matsutani
patent: 5328555 (1994-07-01), Gupta
patent: 5460691 (1995-10-01), Kobayashi et al.
Selwyn et al, "In-situ particulate contamination . . . " SPIE Conf. Proc. Oct., 1989.
Selwyn, "Laser diagnostic techniques . . . " J. Vac. Sci. Technol. A 6 (3) May/Jun. 1988.
"IBM reveals Design for Self Cleaning Tools" Semiconductor International, Sep. 1991 p. 46.
IBM Technical Disclosure Bull. vol. 34, No. 11, pp. 237-238, Apr. 1992.

Affiliated with

Also associated with

Rating

Reducing particulate contamination during semiconductor device p does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reducing particulate contamination during semiconductor device p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reducing particulate contamination during semiconductor device p will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-339044