Reducing line to line capacitance using oriented dielectric...

Details Reducing line to line capacitance using oriented dielectric... Reducing line to line capacitance using oriented dielectric...

2005-08-09

2005-08-09

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S622000, C438S623000, C438S778000, C438S780000

Reexamination Certificate

active

06927180

ABSTRACT:
By exposing dielectrics to a strong electric field, anisotropic characteristics may be introduced into the dielectric. This may result in the dielectric having different dielectric constants in different directions. As integrated circuits scale, importance of line to line capacitance in one plane increases. Thus, in some embodiments, the dielectric constant of the oriented dielectric may be lower in the plane that controls line to line capacitance.

REFERENCES:
patent: 3686591 (1972-08-01), Gikow
patent: 5693566 (1997-12-01), Cheung
patent: 6376393 (2002-04-01), Newton et al.
patent: 2002-164714 (2002-06-01), None

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