Reducing oxidation of phase change memory electrodes

Details Reducing oxidation of phase change memory electrodes Reducing oxidation of phase change memory electrodes

2007-09-27

2009-02-17

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S095000

Reexamination Certificate

active

07491574

ABSTRACT:
A phase change memory may be formed in a way which reduces oxygen infiltration through a chalcogenide layer overlying a lower electrode. Such infiltration may cause oxidation of the lower electrode which adversely affects performance. In one such embodiment, an etch through an overlying upper electrode layer may be stopped before reaching a layer which overlies said chalcogenide layer. Then, photoresist used for such etching may be utilized in a high temperature oxygen plasma. Only after such plasma treatment has been completed is that overlying layer removed, which ultimately exposes the chalcogenide.

REFERENCES:
patent: 2004/0114413 (2004-06-01), Parkinson et al.
patent: 2004/0115860 (2004-06-01), Johnson et al.
patent: 2005/0263823 (2005-12-01), Hwang et al.
patent: 2006/0035403 (2006-02-01), Campbell

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