Upper redundant layer for damascene metallization
Use of a capping layer to reduce particle evolution during...
Use of a low resistivity Cu.sub.3 Ge interlayer as an adhesion p
Use of a novel capped anneal procedure to improve salicide...
Use of a plasma source to form a layer during the formation of a
Use of a sacrificial layer to facilitate metallization for...
Use of a silicon carbide adhesion promoter layer to enhance...
Use of amorphous carbon as a removable ARC material for dual...
Use of boron carbide as an etch-stop and barrier layer for...
Use of conductive electrolessly deposited etch stop layers,...
Use of germanium dioxide and/or alloys of GeO2 with silicon...
Use of hard masks during etching of openings in integrated circu
Use of hydrogen doping for protection of low-k dielectric...
Use of implanted ions to reduce oxide-nitride-oxide (ONO)...
Use of membrane properties to reduce residual stress in an...
Use of metallocenes to inhibit copper oxidation during...
Use of nitrides for flip-chip encapsulation
Use of nitrides for flip-chip encapsulation
Use of organic spin on materials as a stop-layer for local...
Use of palladium in IC manufacturing