Use of nitrides for flip-chip encapsulation

Details Use of nitrides for flip-chip encapsulation Use of nitrides for flip-chip encapsulation

2005-12-06

2005-12-06

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S614000, C438S125000, C438S666000

Reexamination Certificate

active

06972249

ABSTRACT:
A hermetically-sealed semiconductor flip-chip and its method of manufacture are disclosed. The semiconductor flip-chip of the present invention is sealed with a silicon nitride layer on an active surface of the flip-chip. The silicon nitride layer covers the chip active surface, including bond pads and conductive connectors such as solder balls formed over the bond pads to effect electrical and mechanical connection to terminal pads of a carrier substrate. A portion of the silicon nitride layer is penetrated or removed to expose a portion of each conductive connector. The flip-chip is then attached to a substrate by contact of the exposed portions of the conductive connectors with the terminal pads of the substrate. Also included in the invention is the alternative of sealing the flip-chip, substrate and intervening connectors with a silicon nitride layer after the attachment of the flip-chip to the substrate.

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