Use of germanium dioxide and/or alloys of GeO2 with silicon...

Details Use of germanium dioxide and/or alloys of GeO2 with silicon... Use of germanium dioxide and/or alloys of GeO2 with silicon...

2007-03-13

2007-03-13

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S758000, C438S767000, C257SE21212

Reexamination Certificate

active

11055141

ABSTRACT:
A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.

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patent: 5324539 (1994-06-01), Maeda et al.
patent: 5648175 (1997-07-01), Russell et al.
patent: 6040020 (2000-03-01), Sandhu et al.
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S.M. Fisher et al., “Characterizing B-, P-, and Ge-Doped Silicon Oxide Films for Interlevel Dielectrics,” Solid State Technology, pp. 55-64 (Sep. 1993).

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