Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-09
2007-10-09
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C257SE21045, C257SE21295
Reexamination Certificate
active
10772109
ABSTRACT:
Methods for protecting an exposed copper surface of a partially fabricated IC from oxidation during exposure to an oxygen-containing environment are disclosed. The methods involve treating the exposed copper surface with a metallocene compound in order to minimize formation of copper oxide on the exposed surface, and exposing the copper surface to an oxygen-containing environment.
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Blackburn Jason M.
Dalton Jeremie
Gopinath Sanjay
Beyer & Weaver, LLP
Novellus Systems Inc.
Stark Jarrett J
Toledo Fernando L.
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