Use of a plasma source to form a layer during the formation of a

Details Use of a plasma source to form a layer during the formation of a Use of a plasma source to form a layer during the formation of a

1997-10-24

2000-09-12

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438780, 438781, 438907, H01L 214763, H01L 2131, H01L 21469

Patent

active

061177644

ABSTRACT:
A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further comprising a conductive layer over the surface and in the contact. Next, in the chamber, a layer of etch resistant material is formed within the contact over the conductive layer, the etch resistant material not forming over the surface.

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