Transistor having a protruded drain
Transistor having ammonia free nitride between its gate...
Transistor having an etchant-scalable channel length and method
Transistor having an improved sidewall gate structure and...
Transistor having an offset channel section
Transistor having compensation zones enabling a low...
Transistor having compensation zones enabling a low...
Transistor having dielectric stressor elements for applying...
Transistor having enhanced metal silicide and a self-aligned...
Transistor having first and second gate electrodes
Transistor having fully-depleted junctions to reduce...
Transistor having high dielectric constant gate insulating...
Transistor having improved gate structure
Transistor having impurity concentration distribution...
Transistor having insulating spacers on gate sidewalls to...
Transistor having main cell and sub-cells
Transistor having multiple channels
Transistor having multiple gate pads
Transistor having narrow trench filled with...
Transistor having raised source and drain