Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-27
2005-09-27
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S324000, C257S327000
Reexamination Certificate
active
06949787
ABSTRACT:
The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.
REFERENCES:
patent: 4053924 (1977-10-01), Roman et al.
patent: 4300152 (1981-11-01), Lepselter
patent: 4312113 (1982-01-01), Calviello
patent: 4485550 (1984-12-01), Koeneke et al.
patent: 4513309 (1985-04-01), Cricchi
patent: 4554569 (1985-11-01), Tove et al.
patent: RE32613 (1988-02-01), Lepselter et al.
patent: 4780429 (1988-10-01), Roche et al.
patent: 4942441 (1990-07-01), Konishi et al.
patent: 5040034 (1991-08-01), Murakami et al.
patent: 5079182 (1992-01-01), Ilderem et al.
patent: 5250834 (1993-10-01), Nowak
patent: 5323053 (1994-06-01), Luryi et al.
patent: 5338698 (1994-08-01), Subbanna
patent: 5361225 (1994-11-01), Ozawa
patent: 5444302 (1995-08-01), Nakajima et al.
patent: 5663584 (1997-09-01), Welch
patent: 5665993 (1997-09-01), Keller et al.
patent: 5760449 (1998-06-01), Welch
patent: 5767557 (1998-06-01), Kizilyalli
patent: 5801398 (1998-09-01), Hebiguchi
patent: 5883010 (1999-03-01), Merrill et al.
patent: 6037605 (2000-03-01), Yoshimura
patent: 6130750 (2000-10-01), Ausschnitt et al.
patent: 6160282 (2000-12-01), Merrill
patent: 6268636 (2001-07-01), Welch
patent: 6303479 (2001-10-01), Snyder
patent: 6323528 (2001-11-01), Yamazaki et al.
patent: 6353251 (2002-03-01), Kimura
patent: 6413829 (2002-07-01), Yu
patent: 6420742 (2002-07-01), Ahn et al.
patent: 6486080 (2002-11-01), Chooi et al.
patent: 6495882 (2002-12-01), Snyder
patent: 6509609 (2003-01-01), Zhang et al.
patent: 6555879 (2003-04-01), Krivokapic et al.
patent: 2001/0024847 (2001-09-01), Synder
patent: 2002/0030231 (2002-03-01), Okawa et al.
patent: 0 603 102 (1994-06-01), None
patent: 06097109 (1994-04-01), None
patent: 2000124329 (2000-04-01), None
patent: WO 01/45157 (2001-06-01), None
Random House College Dictionary, 1980, Random House, Inc., Revised Ed., pp. 17 and 1066.
International Technology Roadmap for Semiconductors 1999, US Copyright 1999 by Semiconductor Industry Association, Front End Processes Section, p. 107.
Magnusson, U. et al. “Bulk Silicon Technology For Complementary MESFETs.”Electronics Letters, vol. 25, No. 9, Apr. 27, 1989; pps. 565-566.
Lepselter, M.P., Sze, S.M.SB-IGFET: An Insulated Gate Field Effect Transistor Using Schottky Barrier Contacts for Source and Drain. Proceedings of the IEEE, Aug. 1968; pp. 1400-1402.
Lepselter, M.P., MacRae, A.U., MacDonald, R.W.SB-IGFET, II: An Ion Implanted IGFET Using Schottky Barriers. Proceedings of the IEEE, May 1969; pp. 812-813.
Kisaki, Hitoshi.Tunnel Transistor. Proceedings of the IEEE, Jul. 1973; pp. 1053-1054.
Koeneke, C.J., Sze, S.M., Levin, R.M., Kinsbron, E.Schottky MOSFET for VLSI. IEDM, 1981; pp. 367-370.
Sugino, M., Akers, L.A., Rebeschini, M.E.CMOS Latch-Up Elimination Using Schottky Barrier PMOS. IEDM, 1982; pp. 462-465.
Koeneke, C.J., Lynch, W.T.Lightly Doped Schottky MOSFET. IEDM, 1982; pp. 466-469.
Mochizuki, T., Wise, K.D.An n-Channel MOSFET with Schottky Source and Drain. IEEE Electron Device Letters, EDL-5, No. 4, Apr. 1984; pp. 108-111.
Oh, C.S., Koh, Y.H., Kim, C.K.A New P-Channel MOSFET Structure with Schottky Clamped Source and Drain, IEDM, 1984; pp. 609-612.
Swirhun, Stanley E., et al.A VLSI Suitable Schottky Barrier CMOS Process. IEEE Transactions on Electron Devices, ED-32, No. 2, Feb. 1985; pp. 194-202.
Tove, P.A., Bohlin, K., Masszi, F., Norde, H., Nylander, J., Tiren, T., Magnusson, U.Complementary Si MESFET Concept Using Silicon-on-Sapphire Technology. IEEE Electron Device Letters, vol. 9, No. 1, Jan. 1988; pp. 47-49.
Tove, P.A., Bohlin, K.E., Norde, H., Magnusson, U., Tiren, J., Soderbarg, A., Rosling, M., Masszi, F., Nyander, J.Silicon IC Technology Using Complementory MESFETs.Solid State Devices, Elsevier Science Publishers (North Holland), 1988; pp. 607-609.
Tsui, B., Chen, M.A Novel Process for High-Performance Schottky Barrier PMOS. J. Electrochem Soc., vol. 136, No. 5, May 1989; pp. 1456-1459.
Misra, D., Simhadri, V.S.A Survey of the Potential of an IrSi Schottky Barrier MOSFET Based on Simulation Studies. Solid State Electronics, vol. 35, No. 6, 1992; pp. 829-833.
Hattori, Reiji, Nakae, Akihiro, Shirafuji, Junji.A New Type of Tunnel-Effect Transistor Employing Internal Field Emission of Schottky Barrier Junction. Japan J. Appl. Phys., vol. 31, 1992; pp. L1467-L1469.
Hattori, Reiji, Shirafuji, Junji.Numerical Simulation of Tunnel Effect Transistors. Japan J. Appl. Phys., vol. 33, 1994; pp. 612-618.
Tucker, J.R., Wang, C., Lyding, J.W., Shen, T.C., Abeln, G.C.Nanometer Scale MOSFETs and STM Patterning on Si. SSDM 1994, Aug. 1994; pp. 322-324.
Tucker, J.R., Wang, C., Carney, P.S.Silicon Field-Effect Transistor Based on Quantum Tunneling. Applied Physics Letters, vol. 65, No. 5, Aug. 1, 1994; pp. 618-620.
Kimura, Mitsuteru, Matsudate, Tadashi.A New Type of Schottky Tunnel Transistor. IEEE Electron Device Letters, EDL-15, No. 10, Oct. 1994, pp. 412-414.
Snyder, John P., Helms, C.R., Nishi, Yoshio.Experimental Investigation of a PtSi Source and Drain Field Emission Transistor. Applied Physics Letters, vol. 67, No. 10, Sep. 4, 1995; pp. 1420-1422.
Wolf, Stanley.Silicon Processing for the VLSI Era.vol. 3: The Submicron MOSFET, Lattice Press, Sunset Beach, CA, 1995; pp. 523-528.
Rishton, S.A., Ismail, K., Chu, J.O., Chan, K.A MOS Transistor with Schottky Source/Drain Contacts and a Self-Aligned Low-Resistance T-gate. Microelectronics Engineering, vol. 35, 1997; pp. 361-363.
Nishisaka, Mika, Asano, Tanemasa.Reduction of the Floating Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts. Japan J. Appl. Phys., vol. 37, Mar. 1998; pp. 1295-1299.
Wang, C., Snyder, John P., Tucker, J.R.Sub-50nm PtSi Schottky Source/Drain p-MOSFETs. 56thAnnual Device Research Conference Digest, Jun. 1998, pp. 72-73.
Zhao, Q.T., Klinkhammer, F., Dolle, M., Kappius, L., Mantl, S.Nanometer Patterning of Epitaxial CoSi2/Si(100)for Ultrashort Channel Schottky Barrier Metal-Oxide-Semiconductor Field Effect Transistors. Applied Physics Letters, vol. 74, No. 3, Jan. 18, 1999; pp. 454-456.
Wang, C., Snyder, John P., Tucker, J.R.Sub-40nm PtSi Schottky Source-Drain Metal-Oxide-Semiconductor Field-Effect-Transistors. Applied Physics Letters, vol. 74, No. 8, Feb. 22, 1999; pp. 1174-1176.
Snyder, John P., Holms, C.R., Nishi, Yoshio.Analysis of the Potential Distribution in the Channel Region of a Platinum Silicided Source/Drain Metal Oxide Semiconductor Field Effect Transistor. Applied Physics Letters, vol. 74, No. 22, May 31, 1999; pp. 3407-3409.
Saitoh, W., Yamagami, S., Itoh, A., Asada, M.35nm Metal Gate SOI-p-MOSFETs with PtSi Schottky Source/Drain. 57thAnnual Device Research Conference Digest, Jun. 1999; pp. 30-31.
Tucker, J.R.Schottky Barrier MOSFETs for Silicon Nano-electronics. IEEE Frontiers in Electronics, Jan. 1997; pp. 97-100.
Laplante, Philip A. (Editer-in-Chief).Comprehensive Dictionary of Electrical Engineering. IEEE Press, 1999, p. 97.
Muller, Richard S. and Kamins, Theodore I.Device Electronics for Integrated Circuit. John Wiley & Sons, Second Edition, 1977, 1986, pp. 448, 505-511.
Pierret. Modular Series On Solid State Devices, vol. I Semiconductor Fundamentals, Addison-Wesly, 1983; pp. 29-33.
Neudeck, Gerold W.Vol. II: The PN Junction Diode, Modular Series On Solid State Devices. Addison-Wesley, 1983; pp. 8-10.
On-line Encyclopedia Britannica, 2001, definition of “rare-earth element.”, date not established; 2 pages.
Sze, S.M.Physics of Semiconductor Devices, John Wiley & Sons, Second Edition, 1981; pp. 293-294.
Calvet, L. E., Luebben, H., Reed, M.A., Wang, C., Snyder, J.P., and Tucker
Larson John M.
Snyder John P.
Dickey Thomas L.
Dorsey & Whitney LLP
Spinnaker Semiconductor, Inc.
Tran Minhloan
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