Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2005-11-08
2005-11-08
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S676000, C257S692000, C257S723000
Reexamination Certificate
active
06963140
ABSTRACT:
Current practice of the common source configuration is to connect the sources of the two discrete MOSFETs (housed either in separated packages or in a single package) externally on the printed circuit board. Because the gate pads and source pads of the two dies are alternatively placed between gate and source, it does not allow the sources of the power MOSFETs to be connected internally, which requires an additional layer of circuit board to connect the sources and the gates externally. This invention provides a novel electronic device layout design and a novel packaging technique for common source configuration, placing two MOSFETs in a package with their sources connected to a single source post which is located between tow gate posts. In order to facilitate gate bonding and to prevent any shorting between gate and source, two gate pads are used and placed at the upper adjacent corners of each MOSFET.
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Lai Tommy Mau-Lau
Liu Ming
Sin Johnny Kin-On
Analog Power Intellectual Properties
Hu Shouxiang
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