Transistor having first and second gate electrodes

Details Transistor having first and second gate electrodes Transistor having first and second gate electrodes

1996-11-20

1998-11-10

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 59, 257 72, 257347, 349 43, H01L 2904

Patent

active

058347976

ABSTRACT:
The present invention provide a semiconductor device having a first insulating layer provided in contact with a side of an active layer in the direction of thickness thereof, a second insulating layer provided in contact with the other side of the active layer in the direction of the thickness thereof, a first gate electrode for applying a predetermined voltage to the active layer through the first insulating layer, and a second gate electrode for applying a predetermined voltage to the active layer through the second insulating layer. In the semiconductor device, a leak current between the drain and the source is suppressed, thereby obtaining a large driving current.

REFERENCES:
patent: 5434433 (1995-07-01), Takasu et al.
patent: 5475238 (1995-12-01), Hamada

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