Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-04-30
2000-06-06
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257330, 257635, 257752, 257758, 257776, 438585, H01L 2976
Patent
active
060722134
ABSTRACT:
An integrated circuit fabrication process is provided for forming a transistor having an ultra short channel length. First and second masks are formed upon a conductive gate layer, wherein the second mask has a second lateral dimension less than a first lateral dimension of the first mask. The second mask is used to pattern a gate conductor from the conductive gate layer such that the gate conductor has an ultra narrow lateral dimension. Lightly doped drain impurity areas are formed self-aligned to sidewall surfaces of the gate conductor. Spacers are formed laterally adjacent the sidewall surfaces of the gate conductor, and source and drain impurity areas are formed self-aligned to sidewall surfaces of the spacers.
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patent: 5929483 (1999-07-01), Kim et al.
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patent: 5952702 (1999-09-01), Gardner et al.
Gardner Mark I.
Gilmer Mark C.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Ortiz Edgardo
Saadat Mahshid
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