Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-28
2005-06-28
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S344000, C257S408000
Reexamination Certificate
active
06911695
ABSTRACT:
A transistor comprising a gate, a channel beneath the gate and separated from the gate by an insulator, a source adjacent to the channel on a first side of the gate, a drain adjacent to the channel on a second side of the gate, doped extension regions into the channel from the source and the drain that underlap the gate, and insulating spacers adjacent to sidewalls of the gate that overlap the extension regions. The insulating spacers may be used to align the doped extension regions, offset the extension regions from the gate, and reduce Miller capacitance and standby leakage current.
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Ahmed Shafqat
Chao Henry
Kau DerChang
Soward Ida M.
Zarabian Amir
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