Transistor having compensation zones enabling a low...

Details Transistor having compensation zones enabling a low... Transistor having compensation zones enabling a low...

2007-05-01

2007-05-01

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S339000, C257S401000

Reexamination Certificate

active

10704259

ABSTRACT:
A semiconductor component includes a semiconductor body having a substrate of a first conduction type and a first layer of a second conduction type that is located above the substrate. A channel zone of the first conduction type is formed in the first layer. A first terminal zone of the second conduction type is configured adjacent the channel zone. A second terminal zone of the first conduction type is formed in the first layer. Compensation zones of the first conduction type are formed in the first layer.

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