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Gallium nitride-based compound semiconductor light-emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Gallium nitride-based compound semiconductor multilayer...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
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Gallium nitride-based HFET and a method for fabricating a...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
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Gallium nitride-based III-V group compound semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent

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Gallium nitride-based III-V group compound semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Gallium nitride-based III-V group compound semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
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Gallium nitride-based III-V group compound semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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Gallium nitride-based III-V group compound semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Gallium nitride-based III-V group compound semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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Gallium nitride-based III-V group compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent

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Gallium nitride-based III-V group compound semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Gallium nitride-based III-V group compound semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
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Gallium nitride-based light emitting device and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
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Gallium nitride-based light emitting device having ESD...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate

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Gallium nitride-based semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
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Gallium nitride-based semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
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Gallium nitride-based semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Gallium nitride-based semiconductor light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
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Gallium phosphate light emitting diode with zinc-doped contact

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material
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Gallium phosphide green light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
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