Gallium phosphate light emitting diode with zinc-doped contact

Details Gallium phosphate light emitting diode with zinc-doped contact Gallium phosphate light emitting diode with zinc-doped contact

1995-09-25

1997-03-25

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

257 99, 257103, 257607, 257613, 257745, 257751, 257763, 257764, H01L 3300, H01L 2348, H01L 2946

Patent

active

056147368

ABSTRACT:
A light emitting diode includes a doped semiconductor substrate wafer with a layer sequence suitable for light emission in the green spectral range epitaxially applied thereon. A zinc-doped contact is applied to the p-conductive side of the wafer for efficient generation of pure green light emissions. An electrically conductive layer is provided between the zinc-doped contact and the p-conductive wafer side to suppress diffusion of oxygen into the p-conductive wafer side during diode manufacture.

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Patent Abstracts of Japan, vol. 3, No. 92 (E-128) 4. Aug. 1979 for JP-A-54 069 975.
Patent Abstracts of Japan, vol. 3, No. 92 (E-128) 4. Aug. 1979 for JP-A-54 069 979.

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