Gallium nitride-based light emitting device having ESD...

Details Gallium nitride-based light emitting device having ESD... Gallium nitride-based light emitting device having ESD...

2007-07-31

2007-07-31

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257SE33004

Reexamination Certificate

active

11220844

ABSTRACT:
A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.

REFERENCES:
patent: 6340824 (2002-01-01), Komoto et al.
patent: 6593597 (2003-07-01), Sheu
patent: 6674097 (2004-01-01), Komoto et al.
patent: 6838703 (2005-01-01), Yamaguchi et al.
patent: 2005/0077536 (2005-04-01), Choi et al.

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