Gallium nitride-based III-V group compound semiconductor

Details Gallium nitride-based III-V group compound semiconductor Gallium nitride-based III-V group compound semiconductor

1996-06-17

1997-07-29

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 257 76, 257 79, 257103, 257615, 257741, 257745, 257750, 257751, 257763, 257764, 257765, 257766, 257770, 257771, 257773, H01L 2906

Patent

active

056524340

ABSTRACT:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

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