Gallium nitride-based semiconductor device

Details Gallium nitride-based semiconductor device Gallium nitride-based semiconductor device

2005-03-03

2008-10-14

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Group iii-v compound

C257S613000, C257S745000, C257SE31019, C257SE27012

Reexamination Certificate

active

07436045

ABSTRACT:
A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride (GaN) compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity and, in combination therewith, hydrogen. The top portion includes a region containing a Group III element and a Group V element at a non-stoichiometric atomic ratio.

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