Gallium nitride-based light emitting device and method for...

Details Gallium nitride-based light emitting device and method for... Gallium nitride-based light emitting device and method for...

2006-03-21

2006-03-21

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S096000, C257S097000

Reexamination Certificate

active

07015511

ABSTRACT:
For a light emitting device using gallium nitride (GaN), on a substrate are sequentially formed a GaN-based layer, an AlGaN-based layer, and a light emitting layer. To prevent cracks in the AGaN-based layer, the AlGaN-based layer is formed before planarization of the surface of the GaN layer on a surface of the GaN layer which is not planar. For a laser, the AlGaN-based layers serve as clad layers which sandwich the light emitting layer.

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