Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-04-28
1996-10-08
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 22, 257 76, 257 79, 257103, 257615, 257741, 257745, 257750, 257751, 257763, 257764, 257765, 257766, 257770, 257771, H01L 2906
Patent
active
055634222
ABSTRACT:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
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Bando Kanji
Nakamura Shuji
Senoh Masayuki
Yamada Motokazu
Yamada Takao
Nichia Chemical Industries Ltd.
Wojciechowicz Edward
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