Gallium nitride-based compound semiconductor multilayer...

Details Gallium nitride-based compound semiconductor multilayer... Gallium nitride-based compound semiconductor multilayer...

2005-01-28

2009-10-13

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S014000, C257S094000, C257S103000, C257SE27135

Reexamination Certificate

active

07601979

ABSTRACT:
An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining a satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, an active layer, and a p-type layer formed on the substrate, the active layer being sandwiched by the n-type layer and the p-type layer, and the active layer comprising a thick portion and a thin portion, wherein the active layer has a flat lower surface (on the substrate side) and an uneven upper surface so as to form the thick portion and the thin portion.

REFERENCES:
patent: 5088100 (1992-02-01), Vassallo et al.
patent: 5434426 (1995-07-01), Furuyama et al.
patent: 5486490 (1996-01-01), Kakimoto
patent: 6121634 (2000-09-01), Saito et al.
patent: 6222871 (2001-04-01), Chang-Hasnain et al.
patent: 6881983 (2005-04-01), Narayan et al.
patent: 2003/0015104 (2003-01-01), Parker
patent: 2003/0151044 (2003-08-01), Yamada
patent: 2003/0160246 (2003-08-01), Narayan et al.
patent: 2003/0209704 (2003-11-01), Yamada
patent: 2004/0099858 (2004-05-01), Lee
patent: 2005/0026399 (2005-02-01), Chien et al.
patent: 2001-28458 (2001-01-01), None
patent: 2003-289156 (2003-10-01), None

Affiliated with

Also associated with

Rating

Gallium nitride-based compound semiconductor multilayer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gallium nitride-based compound semiconductor multilayer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium nitride-based compound semiconductor multilayer... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4101195