Gallium nitride-based semiconductor device

Details Gallium nitride-based semiconductor device Gallium nitride-based semiconductor device

2005-03-03

2008-11-18

Nguyen, Cuong Quang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S099000, C257S103000, C257S094000, C257SE33023, C257SE33049

Reexamination Certificate

active

07453091

ABSTRACT:
A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity element and, in combination therewith, hydrogen.

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