Gallium phosphide green light-emitting device

Details Gallium phosphide green light-emitting device Gallium phosphide green light-emitting device

1998-02-17

2000-11-07

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

438 46, H01L 3300

Patent

active

061440442

ABSTRACT:
A GaP green light-emitting diode includes an n-type GaP single-crystal substrate on which is formed at least an n-type GaP layer, a nitrogen-doped n-type GaP layer and a nitrogen-doped p-type GaP layer. The concentration of carbon and/or sulfur in the nitrogen-doped n-type GaP layers is controlled to be not more than 6.times.10.sup.15 cm.sup.-3.

REFERENCES:
patent: 5529938 (1996-06-01), Umeda et al.
Stringfellow et al., "Green-Emitting Diodes in Vapor Phase Epitaxial GaP", Solid-State Electronics, 1975, vol. 18, pp. 1019-1028.

Affiliated with

Also associated with

Rating

Gallium phosphide green light-emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gallium phosphide green light-emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium phosphide green light-emitting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1643638