LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

GaInP epitaxial stacking structure and fabrication method...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Between different group iv-vi or ii-vi or iii-v compounds...

GaInP stacked layer structure and field-effect transistor...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

GaInP/GaInAs/GaAs modulation-compositioned channel field-effect

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Gallium antimonide complementary HFET

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Gallium antimonide complementary HFET

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP)...

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...

Gallium arsenide HBT having increased performance and method...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Gallium arsenide monolithically integrated sampling head using e

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor

Gallium arsenide phosphide epitaxial wafer and light...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Gallium arsenide semiconductor devices fabricated with...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Gallium indium nitride arsenide based epitaxial wafer, a...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Gallium nitride (GaN)-based semiconductor light emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...

Gallium nitride base semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Gallium nitride based compound semiconductor light-emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

Gallium nitride based compound semiconductor light-emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device

Gallium nitride based diodes with low forward voltage and...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...

Gallium nitride based diodes with low forward voltage and...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Gallium nitride based III-V group compound semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Gallium nitride based III-V group compound semiconductor...