Gallium nitride based III-V group compound semiconductor...

Details Gallium nitride based III-V group compound semiconductor... Gallium nitride based III-V group compound semiconductor...

2008-05-20

2008-05-20

Sarkar, Asok Kumar (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S098000, C257S100000, C257SE33023

Reexamination Certificate

active

07375383

ABSTRACT:
A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

REFERENCES:
patent: 4153905 (1979-05-01), Charmakadze et al.
patent: 4316208 (1982-02-01), Kobayashi et al.
patent: 4396929 (1983-08-01), Ohki et al.
patent: 4495514 (1985-01-01), Lawrence et al.
patent: 4615766 (1986-10-01), Jackson et al.
patent: 4960728 (1990-10-01), Schaake et al.
patent: 5042043 (1991-08-01), Hatano et al.
patent: 5128587 (1992-07-01), Skotheim et al.
patent: 5182670 (1993-01-01), Khan et al.
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5281830 (1994-01-01), Kotaki et al.
patent: 5285078 (1994-02-01), Mimura et al.
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5369289 (1994-11-01), Tamaki
patent: 5408120 (1995-04-01), Manabe et al.
patent: 5696389 (1997-12-01), Ishikawa et al.
patent: 5739552 (1998-04-01), Kimura et al.
patent: RE36747 (2000-06-01), Manabe et al.
patent: 2004/0051099 (2004-03-01), Moustakas
patent: 0 483 688 (1992-05-01), None
patent: 0 483 688 (1992-05-01), None
patent: 51-85384 (1976-07-01), None
patent: 55009442 (1980-01-01), None
patent: 56-81986 (1981-07-01), None
patent: 57-45272 (1982-03-01), None
patent: 57-111076 (1982-07-01), None
patent: 59228776 (1984-12-01), None
patent: 61-87381 (1986-05-01), None
patent: 61-144659 (1986-09-01), None
patent: 62-2675 (1987-01-01), None
patent: 62-101090 (1987-05-01), None
patent: 62-287675 (1987-12-01), None
patent: 63-61161 (1988-04-01), None
patent: 2-68968 (1990-03-01), None
patent: 02-229475 (1990-09-01), None
patent: 3-183173 (1991-08-01), None
patent: 03-218625 (1991-09-01), None
patent: 4-68579 (1992-03-01), None
patent: 05-013812 (1993-01-01), None
patent: 5-13816 (1993-01-01), None
patent: 5-129658 (1993-05-01), None
patent: 5-211347 (1993-08-01), None
patent: 5-291621 (1993-11-01), None
patent: 6-38265 (1994-05-01), None
patent: 7-45867 (1995-02-01), None
patent: 1990-0701577 (1990-07-01), None
patent: 10-0225612 (1999-07-01), None
patent: 83103775 (1994-04-01), None
Oyo Buturi vol. 60, No. 2, 1991 02; p. 164.
Hayes et al., “Proceedings of Symposium B 1990 Extended Abstracts EA-21 Electronic Optical and Device Properties of Layered Structures”.
Amano et al., “P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI),” Japanese Journal of Applied Physics, vol. 28, No. 12 (1989), pp. L2112-L2114.
Nakamura et al., “Hole Compensation Mechanisms of P-Type GaN Films Dept. Of Electrical Engineering,” Jpn J. Appl. Phys., vol. 31 (1992), pp. 1258-1266.
Su et al., “Ohmic Contacts AuGeNi etc.,” Jpn. J. Applied Physics, vol. 30, No. 5 (May 1991), pp. 914-916.
Amano et al., “UV and blue electroluminescence etc.,” Inst. Phys. Conf. Ser., No. 106: Chapter 10, pp. 725-730, no date/year provided.
Memoirs of the Faculty of Engineering, Nagoya University, vol. 43, No. 2 (1991) Movpe Growth of GaN etc.
Lin et al., “Low Resistance ohmic contacts on wide band-gap GaN,” Appl. Phys. Lett 64(8) (Feb. 1994) pp. 1003-1005.
Khan et al., “Metal semiconductor field effect transistor based on single crystal GaN,” Appl. Phys. Lett 61 (15) (Apr. 1993), pp. 1786-1787.
Japanese KOKAI publication list of patents containing key words “Ni” and “electrode”.
Goldenberg et al “Ultraviolet and violet light-emitting . . . ” Appl. Phys. Letts. 62 (Jan. 25, 1993), No. 4, pp. 381-383.
Foresi et al., “Metal contacts to gallium nitride,” Appl. Phys. Letts 62 (May 31, 1993), No. 22, pp. 2859-2861.
Akasaki et al., “High efficiency UV . . . ,” Proc. of the SPIE, Phys. Concepts of Materials . . . (Oct. 28, 1990), Aachen, DE, pp. 138-149.
Khan et al., “Metal semiconductor field effect . . . ,” Appl. Phys. Letts 62 (15) (Apr. 12, 1993), pp. 1786-1787.
Nakamura et al., “High-power InGan/Gan . . . ,” Appl. Phys. Letts. 62 (19) (May 10, 1993), pp. 2390-2392.
H. Morkoc et al., “Large-band-gap SIC, . . . ” J. Phys. 76(3) (Aug. 1, 1994), pp. 1363-1398.
Patent Abstracts of Japan, vol. 18, No. 80 (E-1505) (Feb. 9, 1994) & JP-A-05 291 621 (Nichia Chem Inc Ltd.))Nov. 5, 1993).
Database WPI, Week 9438, Derwent Publications Ltd. London GV An 94-308360 & JP A 6 237 012 (Nichia Kagaku Kogyo KK) (Aug. 23, 1994).
Akasaki et al., “MOVPE Growth of GaN and AlxGa1-xN and Their Luminescence and Electrical Properties,” Memoirs of the Faculty of Engineering, Nagoya Univ., vol. 43, No. 2 (1991).
Williams Modern GaAs Processing Method (1990), p. 219.
Database WPI, Week 9444, Derwent Publications Ltd., London, Nichia Kagaku Kogyo KK (see Abstract).
JP 6275868 (Sep. 30, 1994) (see Abstract).
Written Opposition dated Jan. 15, 2001, p. 1-3.
Written Opposition dated Jan. 19, 2001, pp. 1-5.
European Search Report, Appln. EP 04012118 (Mar. 14, 2005).
Patent Abstracts of Japan, vol. 13, No. 155 (E0743), Apr. 14, 1989 & JP 63-311777 A (Dec. 20, 1988), Abstract.
Amano et al., “P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI),”Japanese Journal of Applied Physics, vol. 28, No. 12 (Dec. 1989), pp. L2112-L2114.
Akasaki et al., “Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED,” Journal of Luminescence 48 & 49 (1991) pp. 666-670.
Fahrenbruch et al., “II-VI photovoltaic heterojunctions for solar energy conversion,” Applied Physics Letters, vol. 25, No. 10 (Nov. 15, 1974), pp. 605-608.
Moriizumi et al., “Epitaxial Vapor Growth of ZnTe on InAs,” Japan. J. Appl. Phys. 9 (1970), pp. 849-850.
Yoshikawa et al., “Use of dimethyl hydrazine as a new acceptor-dopant source in metalorganic vapor phase epitaxy of ZnSe,” Journal of Crystal Growth 101 (1990), pp. 305-310.
Yoshikawa et al., “Effects of Ar ion laser irradiation on MOVPE of ZnSe using DMZn and DMSe as reactants,” Journal of Crystal Growth 107 (1991), pp. 653-658.

Affiliated with

Also associated with

Rating

Gallium nitride based III-V group compound semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gallium nitride based III-V group compound semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium nitride based III-V group compound semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2779833