Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1997-09-09
1998-11-17
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257191, H01L 29772, H01L 29812
Patent
active
058380302
ABSTRACT:
The present invention provides a GaInP/GaInAs/GaAs modulation-compositioned channel field-effect transistor which comprises: a substrate of semi-insulated GaAs material; a first layer of non-doped GaAs material, formed on the substrate; a second layer of n-doped GaInAs material, formed on the first layer; a third layer of non-doped GaInP material, formed on the second layer; a fourth layer of n-doped GaAs material, formed on the third layer; an Au layer, formed on the third layer; and an Au/Ge/Ni alloy layer, formed on the fourth layer. An accumulation effect is performed because there is a V-shaped energy band existing in the modulation-compositioned channel. Therefore, the transistor of the present invention is characterized by a large current density, a large gate voltage swing with high transconductance, and a high gate breakdown voltage. The present invention has a good potentiality for high-speed, high-power, and large input signal circuit applications.
REFERENCES:
patent: 5091759 (1992-02-01), Shih et al.
patent: 5206527 (1993-04-01), Kuwata
patent: 5331410 (1994-07-01), Kuwata
D. Geiger, et al., "InGaP/InGaAs HFET with High Current Density and High Cut-Off Frequencies," IEEE Electron Device Lett., vol. 16, No. 6, pp. 259-261.
Y. Chan, et al., A10.3Ga0.7As/InxGa1-xAs (0<x<0.25) Doped-Channel Field-Effect Transistors (DCFET's), IEEE Trans. Electron Devices, vol. 42, No. 10, Oct. 1995,pp. 1745-1749.
Laih Lih-Wen
Liu Wen-Chau
Guay John
Knuth Randall J.
National Science Council
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