Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate
2011-08-09
2011-08-09
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
C257S201000, C257S615000, C257SE29327, C257SE29339
Reexamination Certificate
active
07994512
ABSTRACT:
New Group III based diodes are disclosed having a low on state voltage (Vf) and structures to keep reverse current (Irev) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in which the Fermi level (or surface potential) of is not pinned. The barrier potential at the metal-to-semiconductor junction varies depending on the type of metal used and using particular metals lowers the diode's Schottky barrier potential and results in a Vfin the range of 0.1-0.3V. In another embodiment a trench structure is formed on the Schottky diodes semiconductor material to reduce reverse leakage current. and comprises a number of parallel, equally spaced trenches with mesa regions between adjacent trenches. A third embodiment of the invention provides a GaN tunnel diode with a low Vfresulting from the tunneling of electrons through the barrier potential, instead of over it. This embodiment can also have a trench structure to reduce reverse leakage current.
REFERENCES:
patent: 4152044 (1979-05-01), Liu
patent: 4914489 (1990-04-01), Awano
patent: 4963948 (1990-10-01), Awano
patent: 5034783 (1991-07-01), Chang et al.
patent: 5477436 (1995-12-01), Bertling et al.
patent: 5612567 (1997-03-01), Baliga
patent: 5628917 (1997-05-01), MacDonald et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6093952 (2000-07-01), Bandic et al.
patent: 6150672 (2000-11-01), Kaneko
patent: 6330111 (2001-12-01), Myers
patent: 6331915 (2001-12-01), Myers
patent: 6331944 (2001-12-01), Monsma et al.
patent: 6389051 (2002-05-01), Van de Walle et al.
patent: 6504179 (2003-01-01), Ellens et al.
patent: 6526082 (2003-02-01), Corzine et al.
patent: 6657393 (2003-12-01), Natsume
patent: 6746889 (2004-06-01), Eliashevich et al.
patent: 6784463 (2004-08-01), Camras et al.
patent: 6878975 (2005-04-01), Hueschen
patent: 6882051 (2005-04-01), Majumdar et al.
patent: 6932497 (2005-08-01), Huang
patent: 6949774 (2005-09-01), Parikh et al.
patent: 7087936 (2006-08-01), Negley
patent: 7194170 (2007-03-01), Biegelsen
patent: 7214626 (2007-05-01), Huang
patent: 2002/0015013 (2002-02-01), Ragle
patent: 2002/0054495 (2002-05-01), Natsume
patent: 2003/0015708 (2003-01-01), Parikh et al.
patent: 2003/0085409 (2003-05-01), Shen et al.
patent: 2003/0218183 (2003-11-01), Micovic et al.
patent: 2004/0207313 (2004-10-01), Omoto et al.
patent: 2005/0117320 (2005-06-01), Leu et al.
patent: 2005/0158637 (2005-07-01), Kim et al.
patent: 2005/0173692 (2005-08-01), Park et al.
patent: 2005/0173728 (2005-08-01), Saxler
patent: 2005/0219668 (2005-10-01), Taghizadeh
patent: 2006/0081862 (2006-04-01), Chua et al.
patent: 2006/0158899 (2006-07-01), Avabe et al.
patent: 2006/0220046 (2006-10-01), Yu et al.
patent: 2007/0007558 (2007-01-01), Mazzochette
patent: 2007/0090383 (2007-04-01), Ota et al.
patent: 2007/0268694 (2007-11-01), Bailey et al.
patent: 2008/0036364 (2008-02-01), Li et al.
patent: 0936682 (1999-08-01), None
patent: 0936682 (1999-08-01), None
patent: 1349202 (2003-10-01), None
patent: 1653255 (2006-05-01), None
patent: 1681509 (2006-07-01), None
patent: 2586844 (1987-03-01), None
patent: 2759188 (1998-08-01), None
patent: 2814220 (2002-03-01), None
patent: 2297965 (1990-12-01), None
patent: WO 9837584 (1998-08-01), None
patent: WO 9856043 (1998-12-01), None
patent: WO 0111693 (2001-02-01), None
patent: WO 0211212 (2002-02-01), None
patent: 03044870 (2003-05-01), None
patent: WO 03080763 (2003-10-01), None
patent: WO 2007005844 (2007-01-01), None
Sugimura et al. “I-V Characteristics of Schottky/Metal-Insulator-Semiconductor Diodes with Tunnel Thin Barriers”. Japanese Journal of Applied Physics, vol. 39, Part 1, No. 7B, Jul. 30, 2000).
Kwok K. Ng, Complete Guide to Semiconductor Devices, 1995, McGraw-Hill, 1st ed, p. 48-53. (9 pages attached, including cover and copyright pages).
Kwok K. Ng, , Complete Guide to Semiconductor Devices, 2002, Wiley-Interscience, 2nd ed, p. 42-63. (27 pages attached, including cover, copyright, and part of table of contents).
Notice Requesting Submission of Opinion re related Korean Application No. 10-2004-7001033, dated: Mar. 9, 2009.
Sakai et al., “Experimental Investigation of Dependence of Electrical Characteristics on Device Parameters in Trench MOS Barrier Shottky Diodes”, Proceedings of 1998 International Symposium on Power Semiconductor Devices & ICs, Kyoto, pp. 293-296, Jun. 1998.
Zhang AP et al, “Comparison of GaN P-I-N and Schottky Rectifier Performance” IEEE Transactions on Electron Devices, IEEE Inc. New York, US, vol. 48, No. 3, pp. 407-411, Mar. 2001.
European Search Report, Feb. 24, 2009, re related European Application No. EP 08253301.
Official Notice of Rejection mailed on Jun. 10, 2008, Japan Patent Application No. 2003-529535.
Patent Abstracts of Japan, Pub. No. 2000-150920, Pub. Date: May 30, 2000.
Office Action from related U.S. Appl. No. 11/600,617, dated: Dec. 22, 2009.
European Search Report from related European Application No. 07254498.4.
Office Action from related U.S. Appl. No. 10/445,130, dated: Mar. 26, 2004.
Response to related Office Action U.S. Appl. No. 10/445,130 Dated: May 27, 2004.
Office Action from related U.S. Appl. No. 10/445,130, dated: Jul. 16, 2004.
Response to related Office Action U.S. Appl. No. 10/445,130, dated: Dec. 16, 2004.
Office Action from related U.S. Appl. No. 10/445,130, dated: Apr. 5, 2005.
Response to related Office Action U.S. Appl. No. 10/445,130, dated: Sep. 6, 2005.
Office Action from related U.S. Appl. No. 10/445,130, dated: Nov. 15, 2005.
Response to related Office Action U.S. Appl. No. 10/445,130, dated: Mar. 15, 2006.
Office Action from related U.S. Appl. No. 10/445,130, dated: Jun. 13, 2006.
Response to related Office Action U.S. Appl. No. 10/445,130, dated: Dec. 13, 2006.
Office Action from related U.S. Appl. No. 10/445,130, dated: Mar. 22, 2007.
Response to related Office Action U.S. Appl. No. 10/445,130, dated: Aug. 22, 2007.
Office Action from related U.S. Appl. No. 10/445,130, dated: Nov. 15, 2007.
Response to related Office Action U.S. Appl. No. 10/445,130, dated: May 15, 2008.
Notice of Allowance of related U.S. Appl. No. 10/445,130, dated: Aug. 22, 2008.
Office Action from U.S. Appl. No. 11/498,418, dated: Dec. 16, 2009.
Response to Office Action from U.S. Appl. No. 11/498,418, filed: May 16, 2010.
Office Action from U.S. Appl. No. 12/151,089, dated: May 11, 2010.
Office Action from U.S. Appl. No. 11/974,431, dated: Apr. 14, 2010.
Response to Office Action from U.S. Appl. No. 11/974,431, filed: Jul. 6, 2010.
Office Action from U.S. Appl. No. 11/818,818, dated: May 11, 2010.
Office Action from U.S. Appl. No. 11/900,952, dated: Jul. 23, 2010.
Office Action from U.S. Appl. No. 11/982,275, dated: Aug. 20, 2010.
Office Action from U.S. Appl. No. 11/498,418, dated: Sep. 15, 2010.
Office Action from U.S. Appl. No. 11/974,431, dated:Sep. 22, 2010.
Copending U.S. Appl. No. 11/443,741, date: Jun. 14, 2007.
Copending U.S. Appl. No. 11/685,761, date: Mar. 13, 2007.
Copending U.S. Appl. No. 11/939,059, date: Nov. 13, 2007.
PCT Search Report and Written Opinion PCT/US2007/086237, date: May 8, 2008 in related application.
PCT Search Report and Written Opinion PCT/US2007/12403, Date: Aug. 6, 2008.
PCT Search Report and Written Opinion PCT/US2007/086242, Date: Mar. 4, 2008.
Copending U.S. Appl. No. 11/613,692, filed Dec. 20, 2006.
Copending U.S. Appl. No. 11/614,180, filed Dec. 21, 2006.
Copending U.S. Appl. No. 11/624,811, filed Jan. 19, 2007.
Copending U.S. Appl. No. 11/743,754, filed May 3, 2007.
Copending U.S. Appl. No. 11/751,982, filed May 22, 2007.
Copending U.S. Appl. No. 11/753,103, filed May 24, 2007.
Copending U.S. Appl. No. 11/751,990, filed May 22, 2007.
Copending U.S. Appl. No. 11/755,153, filed May 30, 2007.
Copending U.S. Appl. No. 11/856,421, filed Sep. 17, 2007.
Copending U.S. Appl. No. 11/859,048, filed Sep. 21, 2007.
Copending U.S. Appl. No. 11/939,047, filed Nov. 13, 2007.
Copending U.S. Appl. No. 11/936,163, filed Nov. 7, 2007.
Copending U.S. Appl. No. 11/843,243, filed Aug. 22, 2007.
Copending U.S. Appl. No. 11/939,052, filed Nov
Mishra Umesh
Parikh Primit
Arena Andrew O.
Cree Inc.
Gurley Lynne A
Koppel, Patrick, Heybl & Philpott
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