Gallium nitride (GaN)-based semiconductor light emitting...

Details Gallium nitride (GaN)-based semiconductor light emitting... Gallium nitride (GaN)-based semiconductor light emitting...

2007-02-27

2007-02-27

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S094000, C257S099000, C257S103000

Reexamination Certificate

active

10811808

ABSTRACT:
Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; an alloy layer formed on the upper clad layer, and made of an alloy selected from the group consisting of La-based alloys and Ni-based alloys; and an TCO layer formed on the alloy layer. The alloy layer has a high transmittance and forms Ohmic contact, thus reducing a contact resistance.

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Patent Abstracts of Japan—Publication No. 2001-035796, filed Feb. 9, 2001.

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